Chance Discovery Results in New Type of Transistor for High-Power Electronic Devices – SciTechDaily

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Chance Discovery Results in New Type of Transistor for High-Power Electronic Devices – SciTechDaily

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors. A new method to fit together layers of semiconductors as thin as a few nanometers has resulted in not only a scientific discovery but also a new …
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